PART |
Description |
Maker |
BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system 8 AMPERE POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
|
Motorola Inc MOTOROLA[Motorola Inc] Motorola, Inc ON Semiconductor
|
TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS High power NPN silicon transistor Silicon NPN switching transistor Silicon NPN transistor PNP power transistor Small signal NPN transistor Medium power NPN silicon transistor Dual npn-pnp complementary bipolar transistor Complementary power transistors NPN power transistors 模拟IC Analog IC 模拟IC
|
RECOM Electronic GmbH Vishay Intertechnology, Inc.
|
TIP111 TIP110 TIP117 TIP112 TIP115 TIP116 ON2978 |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors From old datasheet system
|
ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB From old datasheet system DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
MJD122 MJD127 MJD127T4 ON1997 MJD122-1 MJD122T4 MJ |
From old datasheet system SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors
|
Motorola, Inc. MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
|
2N4920 2N4919 2N4918 2N491-D |
Medium-Power Plastic PNP Silicon Transistors GENERAL.PURPOSE POWER TRANSISTORS
|
ONSEMI[ON Semiconductor]
|
EMF5XV6T5 EMF5XV6T5G |
Power Management Dual Transistors Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
2SA657 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
2SA483 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
2SB507 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|